Enhanced performance of InAs/GaAs quantum dot superluminescent diodes by direct Si-doping
It is necessary to improve the output power and spectral width of superluminescent diodes (SLDs) simultaneously. In this paper, we show that both the output power and the spectral width of the SLDs based on InAs/GaAs quantum dots (QDs) can be significantly enhanced by direct Si-doping in the QDs. Th...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-04-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5141160 |