One dimensional transport in silicon nanowire junction-less field effect transistors
Abstract Junction-less nanowire transistors are being investigated to solve short channel effects in future CMOS technology. Here we demonstrate 8 nm diameter silicon nanowire junction-less transistors with metallic doping densities which demonstrate clear 1D electronic transport characteristics. Th...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2017-06-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-017-03138-5 |