Enhancing Si<sub>3</sub>N<sub>4</sub> Selectivity over SiO<sub>2</sub> in Low-RF Power NF<sub>3</sub>–O<sub>2</sub> Reactive Ion Etching: The Effect of NO Surface Reaction

Enhancing Si<sub>3</sub>N<sub>4</sub> Selectivity over SiO<sub>2</sub> in Low-RF Power NF<sub>3</sub>–O<sub>2</sub> Reactive Ion Etching: The Effect of NO Surface Reaction

Highly selective etching of silicon nitride (Si<sub>3</sub>N<sub>4</sub>) and silicon dioxide (SiO<sub>2</sub>) has received considerable attention from the semiconductor community owing to its precise patterning and cost efficiency. We investigated the etching se...

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Bibliographic Details
Main Authors: Nguyen Hoang Tung, Heesoo Lee, Duy Khoe Dinh, Dae-Woong Kim, Jin Young Lee, Geon Woong Eom, Hyeong-U Kim, Woo Seok Kang
Format: Article
Language:English
Published: MDPI AG 2024-05-01
Series:Sensors
Subjects:
reactive ion etching (RIE)
selectivity
Si<sub>3</sub>N<sub>4</sub>
SiO<sub>2</sub>
reaction surface
Online Access:https://www.mdpi.com/1424-8220/24/10/3089

Internet

https://www.mdpi.com/1424-8220/24/10/3089

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