CONTROL OF RESIDUAL STRESSES IN STRUCTURES SI-SIO<sub>2</sub>
The consideration is made of the ways leading to increasing the control of residual stresses in structures such as silicon dioxide-monocrystal silicon substrate. The results concerning the determination of the level of residual stresses in structures Si-SiO2 are presented.
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| Format: | Article |
| Language: | Russian |
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Educational institution «Belarusian State University of Informatics and Radioelectronics»
2019-06-01
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| Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| Online Access: | https://doklady.bsuir.by/jour/article/view/121 |