Electrical and Structural Properties of Si<sub>1−<i>x</i></sub>Ge<i><sub>x</sub></i> Nanowires Prepared from a Single-Source Precursor

Electrical and Structural Properties of Si<sub>1−<i>x</i></sub>Ge<i><sub>x</sub></i> Nanowires Prepared from a Single-Source Precursor

Si<sub>1−<i>x</i></sub>Ge<i><sub>x</sub></i> nanowires (NWs) were prepared by gold-supported chemical vapor deposition (CVD) using a single-source precursor with preformed Si–Ge bonds. Besides the tamed reactivity of the precursor, the approach reduces...

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Bibliographic Details
Main Authors: Raphael Behrle, Vanessa Krause, Michael S. Seifner, Benedikt Köstler, Kimberly A. Dick, Matthias Wagner, Masiar Sistani, Sven Barth
Format: Article
Language:English
Published: MDPI AG 2023-02-01
Series:Nanomaterials
Subjects:
nanowires
silicon
germanium
alloy
CVD
field-effect transistors
Online Access:https://www.mdpi.com/2079-4991/13/4/627

Internet

https://www.mdpi.com/2079-4991/13/4/627

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