Ultra-Short Pulsed Laser Annealing Effects on MoS<sub>2</sub> Transistors with Asymmetric and Symmetric Contacts

Ultra-Short Pulsed Laser Annealing Effects on MoS<sub>2</sub> Transistors with Asymmetric and Symmetric Contacts

The ultra-short pulsed laser annealing process enhances the performance of MoS<sub>2</sub> thin film transistors (TFTs) without thermal damage on plastic substrates. However, there has been insufficient investigation into how much improvement can be brought about by the laser process. In...

Full description

Bibliographic Details
Main Authors: Hyeokjin Kwon, Seunghun Baik, Jae Eun Jang, Jaewon Jang, Sunkook Kim, Costas P. Grigoropoulos, Hyuk-Jun Kwon
Format: Article
Language:English
Published: MDPI AG 2019-02-01
Series:Electronics
Subjects:
pulsed laser
transistor
contact
MoS<sub>2</sub>
Online Access:https://www.mdpi.com/2079-9292/8/2/222

Internet

https://www.mdpi.com/2079-9292/8/2/222

Similar Items