Ultra-Short Pulsed Laser Annealing Effects on MoS<sub>2</sub> Transistors with Asymmetric and Symmetric Contacts
The ultra-short pulsed laser annealing process enhances the performance of MoS<sub>2</sub> thin film transistors (TFTs) without thermal damage on plastic substrates. However, there has been insufficient investigation into how much improvement can be brought about by the laser process. In...
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MDPI AG
2019-02-01
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| Series: | Electronics |
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| Online Access: | https://www.mdpi.com/2079-9292/8/2/222 |
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| author | Hyeokjin Kwon Seunghun Baik Jae Eun Jang Jaewon Jang Sunkook Kim Costas P. Grigoropoulos Hyuk-Jun Kwon |
| author_facet | Hyeokjin Kwon Seunghun Baik Jae Eun Jang Jaewon Jang Sunkook Kim Costas P. Grigoropoulos Hyuk-Jun Kwon |
| author_sort | Hyeokjin Kwon |
| collection | DOAJ |
| description | The ultra-short pulsed laser annealing process enhances the performance of MoS<sub>2</sub> thin film transistors (TFTs) without thermal damage on plastic substrates. However, there has been insufficient investigation into how much improvement can be brought about by the laser process. In this paper, we observed how the parameters of TFTs, i.e., mobility, subthreshold swing, I<sub>on</sub>/I<sub>off</sub> ratio, and V<sub>th</sub>, changed as the TFTs’ contacts were (1) not annealed, (2) annealed on one side, or (3) annealed on both sides. The results showed that the linear effective mobility (μ<sub>eff_lin</sub>) increased from 13.14 [cm<sup>2</sup>/Vs] (not annealed) to 18.84 (one side annealed) to 24.91 (both sides annealed). Also, I<sub>on</sub>/I<sub>off</sub> ratio increased from <inline-formula> <math display="inline"> <semantics> <mrow> <mn>2.27</mn> <mo>×</mo> <msup> <mrow> <mn>10</mn> </mrow> <mn>5</mn> </msup> </mrow> </semantics> </math> </inline-formula> (not annealed) to <inline-formula> <math display="inline"> <semantics> <mrow> <mn>3.14</mn> <mo>×</mo> <msup> <mrow> <mn>10</mn> </mrow> <mn>5</mn> </msup> </mrow> </semantics> </math> </inline-formula> (one side annealed) to <inline-formula> <math display="inline"> <semantics> <mrow> <mn>4.81</mn> <mo>×</mo> <msup> <mrow> <mn>10</mn> </mrow> <mn>5</mn> </msup> <mo> </mo> </mrow> </semantics> </math> </inline-formula>(both sides annealed), with V<sub>th</sub> shifting to negative direction. Analyzing the main reason for the improvement through the Y function method (YFM), we found that both the contact resistance (R<sub>c</sub>) and the channel interface resistance (R<sub>ch</sub>) improves after the pulsed laser annealings under different conditions. Moreover, the R<sub>c</sub> enhances more dramatically than the R<sub>ch</sub> does. In conclusion, our picosecond laser annealing improves the performance of TFTs (especially, the R<sub>c</sub>) in direct proportion to the number of annealings applied. The results will contribute to the investigation about correlations between the laser annealing process and the performance of devices. |
| first_indexed | 2024-04-11T14:05:44Z |
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| language | English |
| last_indexed | 2024-04-11T14:05:44Z |
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| spelling | doaj.art-445574aa2eee4b04af1357d535b169062022-12-22T04:19:53ZengMDPI AGElectronics2079-92922019-02-018222210.3390/electronics8020222electronics8020222Ultra-Short Pulsed Laser Annealing Effects on MoS<sub>2</sub> Transistors with Asymmetric and Symmetric ContactsHyeokjin Kwon0Seunghun Baik1Jae Eun Jang2Jaewon Jang3Sunkook Kim4Costas P. Grigoropoulos5Hyuk-Jun Kwon6Department of Information and Communication Engineering, DGIST, Daegu 42988, KoreaDepartment of Information and Communication Engineering, DGIST, Daegu 42988, KoreaDepartment of Information and Communication Engineering, DGIST, Daegu 42988, KoreaSchool of Electronics Engineering, Kyungpook National University, Daegu 41566, KoreaSchool of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 16419, KoreaDepartment of Mechanical Engineering, University of California, Berkeley, CA 94720, USADepartment of Information and Communication Engineering, DGIST, Daegu 42988, KoreaThe ultra-short pulsed laser annealing process enhances the performance of MoS<sub>2</sub> thin film transistors (TFTs) without thermal damage on plastic substrates. However, there has been insufficient investigation into how much improvement can be brought about by the laser process. In this paper, we observed how the parameters of TFTs, i.e., mobility, subthreshold swing, I<sub>on</sub>/I<sub>off</sub> ratio, and V<sub>th</sub>, changed as the TFTs’ contacts were (1) not annealed, (2) annealed on one side, or (3) annealed on both sides. The results showed that the linear effective mobility (μ<sub>eff_lin</sub>) increased from 13.14 [cm<sup>2</sup>/Vs] (not annealed) to 18.84 (one side annealed) to 24.91 (both sides annealed). Also, I<sub>on</sub>/I<sub>off</sub> ratio increased from <inline-formula> <math display="inline"> <semantics> <mrow> <mn>2.27</mn> <mo>×</mo> <msup> <mrow> <mn>10</mn> </mrow> <mn>5</mn> </msup> </mrow> </semantics> </math> </inline-formula> (not annealed) to <inline-formula> <math display="inline"> <semantics> <mrow> <mn>3.14</mn> <mo>×</mo> <msup> <mrow> <mn>10</mn> </mrow> <mn>5</mn> </msup> </mrow> </semantics> </math> </inline-formula> (one side annealed) to <inline-formula> <math display="inline"> <semantics> <mrow> <mn>4.81</mn> <mo>×</mo> <msup> <mrow> <mn>10</mn> </mrow> <mn>5</mn> </msup> <mo> </mo> </mrow> </semantics> </math> </inline-formula>(both sides annealed), with V<sub>th</sub> shifting to negative direction. Analyzing the main reason for the improvement through the Y function method (YFM), we found that both the contact resistance (R<sub>c</sub>) and the channel interface resistance (R<sub>ch</sub>) improves after the pulsed laser annealings under different conditions. Moreover, the R<sub>c</sub> enhances more dramatically than the R<sub>ch</sub> does. In conclusion, our picosecond laser annealing improves the performance of TFTs (especially, the R<sub>c</sub>) in direct proportion to the number of annealings applied. The results will contribute to the investigation about correlations between the laser annealing process and the performance of devices.https://www.mdpi.com/2079-9292/8/2/222pulsed lasertransistorcontactMoS<sub>2</sub> |
| spellingShingle | Hyeokjin Kwon Seunghun Baik Jae Eun Jang Jaewon Jang Sunkook Kim Costas P. Grigoropoulos Hyuk-Jun Kwon Ultra-Short Pulsed Laser Annealing Effects on MoS<sub>2</sub> Transistors with Asymmetric and Symmetric Contacts Electronics pulsed laser transistor contact MoS<sub>2</sub> |
| title | Ultra-Short Pulsed Laser Annealing Effects on MoS<sub>2</sub> Transistors with Asymmetric and Symmetric Contacts |
| title_full | Ultra-Short Pulsed Laser Annealing Effects on MoS<sub>2</sub> Transistors with Asymmetric and Symmetric Contacts |
| title_fullStr | Ultra-Short Pulsed Laser Annealing Effects on MoS<sub>2</sub> Transistors with Asymmetric and Symmetric Contacts |
| title_full_unstemmed | Ultra-Short Pulsed Laser Annealing Effects on MoS<sub>2</sub> Transistors with Asymmetric and Symmetric Contacts |
| title_short | Ultra-Short Pulsed Laser Annealing Effects on MoS<sub>2</sub> Transistors with Asymmetric and Symmetric Contacts |
| title_sort | ultra short pulsed laser annealing effects on mos sub 2 sub transistors with asymmetric and symmetric contacts |
| topic | pulsed laser transistor contact MoS<sub>2</sub> |
| url | https://www.mdpi.com/2079-9292/8/2/222 |
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