Carrier-transport-path-induced switching parameter fluctuation in oxide-based resistive switching memory
A key challenge in resistive switching memory is to reduce the switching parameter fluctuation, which always affects the stability and reliability of an RS device. Numerous methods have been carried out for improving the fluctuation of the switching parameter. However, because the physical nature of...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2015-01-01
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| Series: | Materials Research Express |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2053-1591/2/4/046304 |