Carrier-transport-path-induced switching parameter fluctuation in oxide-based resistive switching memory
A key challenge in resistive switching memory is to reduce the switching parameter fluctuation, which always affects the stability and reliability of an RS device. Numerous methods have been carried out for improving the fluctuation of the switching parameter. However, because the physical nature of...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
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IOP Publishing
2015-01-01
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| Series: | Materials Research Express |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2053-1591/2/4/046304 |
| _version_ | 1797747225096355840 |
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| author | Nianduan Lu Ling Li Pengxiao Sun Ming Wang Qi Liu Hangbing Lv Shibing Long Writam Banerjee Ming Liu |
| author_facet | Nianduan Lu Ling Li Pengxiao Sun Ming Wang Qi Liu Hangbing Lv Shibing Long Writam Banerjee Ming Liu |
| author_sort | Nianduan Lu |
| collection | DOAJ |
| description | A key challenge in resistive switching memory is to reduce the switching parameter fluctuation, which always affects the stability and reliability of an RS device. Numerous methods have been carried out for improving the fluctuation of the switching parameter. However, because the physical nature of the switching parameter fluctuation is, to date, not well understood, a universal identification of the switching parameter fluctuation still has not be achieved. Based on the activation energy of carrier transport from the first-principles calculations, we present a physical model. This proposed model is considering the macroscopic fluctuating I–V curve and material microstructure to analyze the characteristics of carrier transport and the origin of switching parameter fluctuations. The proposed model may specially identify the defect energy level and quantify the distribution of the switching parameter. The model provides possible clues for improving the uniformity of the switching parameter as well. |
| first_indexed | 2024-03-12T15:47:47Z |
| format | Article |
| id | doaj.art-445e7d512ed54f96abf2d18be756dde0 |
| institution | Directory Open Access Journal |
| issn | 2053-1591 |
| language | English |
| last_indexed | 2024-03-12T15:47:47Z |
| publishDate | 2015-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Materials Research Express |
| spelling | doaj.art-445e7d512ed54f96abf2d18be756dde02023-08-09T15:20:04ZengIOP PublishingMaterials Research Express2053-15912015-01-012404630410.1088/2053-1591/2/4/046304Carrier-transport-path-induced switching parameter fluctuation in oxide-based resistive switching memoryNianduan Lu0Ling Li1Pengxiao Sun2Ming Wang3Qi Liu4Hangbing Lv5Shibing Long6Writam Banerjee7Ming Liu8Institute of Microelectronics, Chinese Academy of Sciences, No.3, Bei-Tu-Cheng West Road, Beijing 100029, People’s Republic of ChinaInstitute of Microelectronics, Chinese Academy of Sciences, No.3, Bei-Tu-Cheng West Road, Beijing 100029, People’s Republic of ChinaInstitute of Microelectronics, Chinese Academy of Sciences, No.3, Bei-Tu-Cheng West Road, Beijing 100029, People’s Republic of ChinaInstitute of Microelectronics, Chinese Academy of Sciences, No.3, Bei-Tu-Cheng West Road, Beijing 100029, People’s Republic of ChinaInstitute of Microelectronics, Chinese Academy of Sciences, No.3, Bei-Tu-Cheng West Road, Beijing 100029, People’s Republic of ChinaInstitute of Microelectronics, Chinese Academy of Sciences, No.3, Bei-Tu-Cheng West Road, Beijing 100029, People’s Republic of ChinaInstitute of Microelectronics, Chinese Academy of Sciences, No.3, Bei-Tu-Cheng West Road, Beijing 100029, People’s Republic of ChinaInstitute of Microelectronics, Chinese Academy of Sciences, No.3, Bei-Tu-Cheng West Road, Beijing 100029, People’s Republic of ChinaInstitute of Microelectronics, Chinese Academy of Sciences, No.3, Bei-Tu-Cheng West Road, Beijing 100029, People’s Republic of ChinaA key challenge in resistive switching memory is to reduce the switching parameter fluctuation, which always affects the stability and reliability of an RS device. Numerous methods have been carried out for improving the fluctuation of the switching parameter. However, because the physical nature of the switching parameter fluctuation is, to date, not well understood, a universal identification of the switching parameter fluctuation still has not be achieved. Based on the activation energy of carrier transport from the first-principles calculations, we present a physical model. This proposed model is considering the macroscopic fluctuating I–V curve and material microstructure to analyze the characteristics of carrier transport and the origin of switching parameter fluctuations. The proposed model may specially identify the defect energy level and quantify the distribution of the switching parameter. The model provides possible clues for improving the uniformity of the switching parameter as well.https://doi.org/10.1088/2053-1591/2/4/046304oxide-based resistive switching memoryfirst-principles calculationsswitching paramerter fluctuationcarrier transport path |
| spellingShingle | Nianduan Lu Ling Li Pengxiao Sun Ming Wang Qi Liu Hangbing Lv Shibing Long Writam Banerjee Ming Liu Carrier-transport-path-induced switching parameter fluctuation in oxide-based resistive switching memory Materials Research Express oxide-based resistive switching memory first-principles calculations switching paramerter fluctuation carrier transport path |
| title | Carrier-transport-path-induced switching parameter fluctuation in oxide-based resistive switching memory |
| title_full | Carrier-transport-path-induced switching parameter fluctuation in oxide-based resistive switching memory |
| title_fullStr | Carrier-transport-path-induced switching parameter fluctuation in oxide-based resistive switching memory |
| title_full_unstemmed | Carrier-transport-path-induced switching parameter fluctuation in oxide-based resistive switching memory |
| title_short | Carrier-transport-path-induced switching parameter fluctuation in oxide-based resistive switching memory |
| title_sort | carrier transport path induced switching parameter fluctuation in oxide based resistive switching memory |
| topic | oxide-based resistive switching memory first-principles calculations switching paramerter fluctuation carrier transport path |
| url | https://doi.org/10.1088/2053-1591/2/4/046304 |
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