Suppressing Non-Uniform Tunneling in InAs/GaSb TFET With Dual-Metal Gate
Non-uniformity in electric field causes early onset of tunneling near the edge of InAs/GaSb hetero-junction tunneling field-effect transistors. When a small area, often an edge, of the tunneling junction has a lower turn-on voltage, the steep switching characteristic is degraded. Fermi pinning at In...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2016-01-01
|
| Series: | IEEE Journal of the Electron Devices Society |
| Online Access: | https://ieeexplore.ieee.org/document/7369949/ |