The Photoluminescence Characteristics of Partially and Fully (P-N) Porous Silicon
In this work, we present results of photoluminescence (PL) properties of fully (p-n) porous silicon device. Porous silicon layer has been prepared by Photo-electrochemical etching under different etching time of abrupt (p-n) silicon junction. The photoluminescence spectra, it is found that the forma...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Unviversity of Technology- Iraq
2013-03-01
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| Series: | Engineering and Technology Journal |
| Subjects: | |
| Online Access: | https://etj.uotechnology.edu.iq/article_84138_6bf545276a4bbecee2d9d525ef651e00.pdf |