Initial Growth and Crystallization Onset of Plasma Enhanced-Atomic Layer Deposited ZnO
Direct plasma enhanced-atomic layer deposition (PE-ALD) is adopted for the growth of ZnO on <i>c</i>-Si with native oxide at room temperature. The initial stages of growth both in terms of thickness evolution and crystallization onset are followed <i>ex-situ</i> by a combinat...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2020-04-01
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| Series: | Crystals |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2073-4352/10/4/291 |