Initial Growth and Crystallization Onset of Plasma Enhanced-Atomic Layer Deposited ZnO
Direct plasma enhanced-atomic layer deposition (PE-ALD) is adopted for the growth of ZnO on <i>c</i>-Si with native oxide at room temperature. The initial stages of growth both in terms of thickness evolution and crystallization onset are followed <i>ex-situ</i> by a combinat...
Main Authors: | Alberto Perrotta, Julian Pilz, Roland Resel, Oliver Werzer, Anna Maria Coclite |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2020-04-01
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Series: | Crystals |
Subjects: | |
Online Access: | https://www.mdpi.com/2073-4352/10/4/291 |
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