Gate Failure Behavior and Mechanism of AlGaN/GaN HEMTs Under Transmission Line Pulsed Stress

Gate Failure Behavior and Mechanism of AlGaN/GaN HEMTs Under Transmission Line Pulsed Stress

The failure behavior and the corresponding physical mechanism of the AlGaN/GaN high electron mobility transistors (HEMTs) under transmission line pulse (TLP) stress were investigated in this paper. The result shows that the output and transfer characteristics of the AlGaN/GaN HEMTs after 90 cycles b...

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Bibliographic Details
Main Authors: Y. Ren, Y. Q. Chen, C. Liu, X. B. Xu, R. Gao, D. Y. Lei, P. Lai, Y. Huang, J. He
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
GaN HEMT
failure
transmission line pulse
Online Access:https://ieeexplore.ieee.org/document/9459154/

Internet

https://ieeexplore.ieee.org/document/9459154/

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