A High-Voltage Serial-In-Parallel-Out Shift Register With Amorphous Silicon TFTs

In this paper, we proposed a high-voltage serial-in-parallel-out (SIPO) shift register based on amorphous silicon thin-film transistors (a-Si TFTs). We provided a detailed introduction of the bootstrap inverter, the key component of the proposed shift register, and presented the simulation and analy...

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Bibliographic Details
Main Authors: Yingbo Wei, Dongping Wang, Shengzhe Jiang, Hanbin Ma, Jun Yu
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Online Access:https://ieeexplore.ieee.org/document/10175388/