Deposition of diamond films by microwave plasma CVD on 4H-SiC substrates
Diamond films were deposited on 4H-SiC substrates by microwave plasma chemical vapor deposition (MPCVD). The substrate pretreatment method of electrostatic adsorption of seed crystals by nanodiamond suspensions was used, and the nucleation density of diamond on the substrate surface reached 10 ^10 /...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2023-01-01
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| Series: | Materials Research Express |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2053-1591/ad094f |
| _version_ | 1797374768079437824 |
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| author | Shasha Wei Renqi Xie Yuanyou Li Jiahao Meng Rongchuan Lin Jianchun Weng Bo Li |
| author_facet | Shasha Wei Renqi Xie Yuanyou Li Jiahao Meng Rongchuan Lin Jianchun Weng Bo Li |
| author_sort | Shasha Wei |
| collection | DOAJ |
| description | Diamond films were deposited on 4H-SiC substrates by microwave plasma chemical vapor deposition (MPCVD). The substrate pretreatment method of electrostatic adsorption of seed crystals by nanodiamond suspensions was used, and the nucleation density of diamond on the substrate surface reached 10 ^10 /cm ^2 compared with ultrasonic seed crystals of diamond micro-powder suspensions, and continuous dense diamond films were formed in a shorter growth time. Scanning electron microscopy and Raman spectroscopy were used to characterize the changes of diamond grain morphology and quality with methane concentration, deposition time and substrate temperature during the growth process. The experimental results show that the methane concentration, deposition time and substrate temperature are the key factors affecting the grain shape and quality of diamond. And the best quality of diamond film is obtained at 850 °C substrate temperature. |
| first_indexed | 2024-03-08T19:10:28Z |
| format | Article |
| id | doaj.art-4505097758234c139fb6f26afcd24d11 |
| institution | Directory Open Access Journal |
| issn | 2053-1591 |
| language | English |
| last_indexed | 2024-03-08T19:10:28Z |
| publishDate | 2023-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Materials Research Express |
| spelling | doaj.art-4505097758234c139fb6f26afcd24d112023-12-27T15:35:04ZengIOP PublishingMaterials Research Express2053-15912023-01-01101212640410.1088/2053-1591/ad094fDeposition of diamond films by microwave plasma CVD on 4H-SiC substratesShasha Wei0Renqi Xie1https://orcid.org/0009-0004-7348-5624Yuanyou Li2https://orcid.org/0009-0006-4092-2511Jiahao Meng3Rongchuan Lin4Jianchun Weng5Bo Li6School of Science, Jimei University , Xiamen, 361021, People’s Republic of ChinaSchool of Science, Jimei University , Xiamen, 361021, People’s Republic of ChinaSchool of Science, Jimei University , Xiamen, 361021, People’s Republic of ChinaSchool of Science, Jimei University , Xiamen, 361021, People’s Republic of ChinaSchool of Science, Jimei University , Xiamen, 361021, People’s Republic of ChinaSchool of Science, Jimei University , Xiamen, 361021, People’s Republic of ChinaSchool of Science, Jimei University , Xiamen, 361021, People’s Republic of ChinaDiamond films were deposited on 4H-SiC substrates by microwave plasma chemical vapor deposition (MPCVD). The substrate pretreatment method of electrostatic adsorption of seed crystals by nanodiamond suspensions was used, and the nucleation density of diamond on the substrate surface reached 10 ^10 /cm ^2 compared with ultrasonic seed crystals of diamond micro-powder suspensions, and continuous dense diamond films were formed in a shorter growth time. Scanning electron microscopy and Raman spectroscopy were used to characterize the changes of diamond grain morphology and quality with methane concentration, deposition time and substrate temperature during the growth process. The experimental results show that the methane concentration, deposition time and substrate temperature are the key factors affecting the grain shape and quality of diamond. And the best quality of diamond film is obtained at 850 °C substrate temperature.https://doi.org/10.1088/2053-1591/ad094fmicrowave plasma CVD4H-SiCsubstrate pretreatmentdiamond films |
| spellingShingle | Shasha Wei Renqi Xie Yuanyou Li Jiahao Meng Rongchuan Lin Jianchun Weng Bo Li Deposition of diamond films by microwave plasma CVD on 4H-SiC substrates Materials Research Express microwave plasma CVD 4H-SiC substrate pretreatment diamond films |
| title | Deposition of diamond films by microwave plasma CVD on 4H-SiC substrates |
| title_full | Deposition of diamond films by microwave plasma CVD on 4H-SiC substrates |
| title_fullStr | Deposition of diamond films by microwave plasma CVD on 4H-SiC substrates |
| title_full_unstemmed | Deposition of diamond films by microwave plasma CVD on 4H-SiC substrates |
| title_short | Deposition of diamond films by microwave plasma CVD on 4H-SiC substrates |
| title_sort | deposition of diamond films by microwave plasma cvd on 4h sic substrates |
| topic | microwave plasma CVD 4H-SiC substrate pretreatment diamond films |
| url | https://doi.org/10.1088/2053-1591/ad094f |
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