Analog HfxZr1‐xO2 Memristors with Tunable Linearity for Implementation in a Self‐Organizing Map Neural Network

Analog HfxZr1‐xO2 Memristors with Tunable Linearity for Implementation in a Self‐Organizing Map Neural Network

Abstract Doped‐metal oxide‐based memristors, with the potential for improved switching performance and capability for multi‐bit information storage, are attractive candidates in the implementation of artificial neural network (ANN) hardware systems. However, performance and process considerations su...

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Bibliographic Details
Main Authors: Quanzhou Zhu, Biyi Jiang, Jun Lan, Zeyu Hou, Yida Dong, Zhongrui Wang, Xuewei Feng, Mei Shen, Hongyu Yu, Kai Chen, Jiamin Li, Longyang Lin, Feichi Zhou, Yida Li
Format: Article
Language:English
Published: Wiley-VCH 2024-04-01
Series:Advanced Electronic Materials
Subjects:
hafnium oxide
resistive switching
memristor
SOM
Online Access:https://doi.org/10.1002/aelm.202300508

Internet

https://doi.org/10.1002/aelm.202300508

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