Experimental Study on Femtosecond Laser Processing Performance of Single-Crystal Silicon Carbide
Femtosecond laser processing technology offers a promising technique for the preparation of micro and nanostructures of single-crystal silicon carbide (SiC), thanks to its high precision and non-destructive processing. However, further research is needed to optimize processing parameters, as well as...
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-06-01
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| Series: | Applied Sciences |
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| Online Access: | https://www.mdpi.com/2076-3417/13/13/7533 |
| _version_ | 1827735212646203392 |
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| author | Ru Zhang Quanjing Wang Qingkui Chen Aijun Tang Wenbo Zhao |
| author_facet | Ru Zhang Quanjing Wang Qingkui Chen Aijun Tang Wenbo Zhao |
| author_sort | Ru Zhang |
| collection | DOAJ |
| description | Femtosecond laser processing technology offers a promising technique for the preparation of micro and nanostructures of single-crystal silicon carbide (SiC), thanks to its high precision and non-destructive processing. However, further research is needed to optimize processing parameters, as well as improve efficiency and quality of the process. This study conducts experiments to explore the effects of femtosecond laser ablation on single-crystal SiC. The influence and significance of parameters, such as fluence (F), repetition rate, scan speed (S), multipass scanning (c) and numerical aperture on the performance of grooves, including groove depth, groove width, heat-affected zone (HAZ) width, material removal rate (MRR) and side wall inclination angle, were studied. The results show that the influence of fluence and numerical aperture on groove depth, groove width, HAZ width, MRR and side wall inclination angle is very significant. The scan speed has a very significant effect on the groove depth, groove width, HAZ width and side wall inclination angle but has insignificant effect on the MRR. Repetition rate and multipass scanning have a very significant effect on groove depth, HAZ width, MRR and side wall inclination angle and a moderately significant effect on groove width. The experimental methods of increasing the aspect ratio and reducing the HAZ width were studied, and a significance analysis was carried out. Fluence, multipass scanning and z-layer feed have significant effects on groove depth, groove width, aspect ratio, HAZ width and MRR. The influence of polarization angle on groove depth, groove width, aspect ratio and MRR is insignificant. |
| first_indexed | 2024-03-11T01:46:59Z |
| format | Article |
| id | doaj.art-453217bb1c78490087388896f975dfb3 |
| institution | Directory Open Access Journal |
| issn | 2076-3417 |
| language | English |
| last_indexed | 2024-03-11T01:46:59Z |
| publishDate | 2023-06-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Applied Sciences |
| spelling | doaj.art-453217bb1c78490087388896f975dfb32023-11-18T16:07:48ZengMDPI AGApplied Sciences2076-34172023-06-011313753310.3390/app13137533Experimental Study on Femtosecond Laser Processing Performance of Single-Crystal Silicon CarbideRu Zhang0Quanjing Wang1Qingkui Chen2Aijun Tang3Wenbo Zhao4School of Mechanical and Electronic Engineering, Shandong Jianzhu University, Jinan 250101, ChinaSchool of Mechanical and Electronic Engineering, Shandong Jianzhu University, Jinan 250101, ChinaSchool of Mechanical and Electronic Engineering, Shandong Jianzhu University, Jinan 250101, ChinaSchool of Mechanical and Electronic Engineering, Shandong Jianzhu University, Jinan 250101, ChinaSchool of Mechanical and Electronic Engineering, Shandong Jianzhu University, Jinan 250101, ChinaFemtosecond laser processing technology offers a promising technique for the preparation of micro and nanostructures of single-crystal silicon carbide (SiC), thanks to its high precision and non-destructive processing. However, further research is needed to optimize processing parameters, as well as improve efficiency and quality of the process. This study conducts experiments to explore the effects of femtosecond laser ablation on single-crystal SiC. The influence and significance of parameters, such as fluence (F), repetition rate, scan speed (S), multipass scanning (c) and numerical aperture on the performance of grooves, including groove depth, groove width, heat-affected zone (HAZ) width, material removal rate (MRR) and side wall inclination angle, were studied. The results show that the influence of fluence and numerical aperture on groove depth, groove width, HAZ width, MRR and side wall inclination angle is very significant. The scan speed has a very significant effect on the groove depth, groove width, HAZ width and side wall inclination angle but has insignificant effect on the MRR. Repetition rate and multipass scanning have a very significant effect on groove depth, HAZ width, MRR and side wall inclination angle and a moderately significant effect on groove width. The experimental methods of increasing the aspect ratio and reducing the HAZ width were studied, and a significance analysis was carried out. Fluence, multipass scanning and z-layer feed have significant effects on groove depth, groove width, aspect ratio, HAZ width and MRR. The influence of polarization angle on groove depth, groove width, aspect ratio and MRR is insignificant.https://www.mdpi.com/2076-3417/13/13/7533femtosecond lasersilicon carbideprocessing performance |
| spellingShingle | Ru Zhang Quanjing Wang Qingkui Chen Aijun Tang Wenbo Zhao Experimental Study on Femtosecond Laser Processing Performance of Single-Crystal Silicon Carbide Applied Sciences femtosecond laser silicon carbide processing performance |
| title | Experimental Study on Femtosecond Laser Processing Performance of Single-Crystal Silicon Carbide |
| title_full | Experimental Study on Femtosecond Laser Processing Performance of Single-Crystal Silicon Carbide |
| title_fullStr | Experimental Study on Femtosecond Laser Processing Performance of Single-Crystal Silicon Carbide |
| title_full_unstemmed | Experimental Study on Femtosecond Laser Processing Performance of Single-Crystal Silicon Carbide |
| title_short | Experimental Study on Femtosecond Laser Processing Performance of Single-Crystal Silicon Carbide |
| title_sort | experimental study on femtosecond laser processing performance of single crystal silicon carbide |
| topic | femtosecond laser silicon carbide processing performance |
| url | https://www.mdpi.com/2076-3417/13/13/7533 |
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