Novel Spiral Silicon Drift Detector with Equal Cathode Ring Gap and Given Surface Electric Fields

Since the advent of semiconductor detectors, they have been developed for several generations, and their performance has been continuously improved. In this paper, we propose a new silicon drift detector structure that is different from the traditional spiral SDD structure that has a gap between the...

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Bibliographic Details
Main Authors: Jiaxiong Sun, Zheng Li, Xiaodan Li, Xinqing Li, Xinyi Cai, Zewen Tan, Manwen Liu, Hongfei Wang
Format: Article
Language:English
Published: MDPI AG 2022-10-01
Series:Micromachines
Subjects:
Online Access:https://www.mdpi.com/2072-666X/13/10/1682