Raman- and Infrared-Active Phonons in Nonlinear Semiconductor AgGaGeS<sub>4</sub>

Raman- and Infrared-Active Phonons in Nonlinear Semiconductor AgGaGeS<sub>4</sub>

AgGaGeS<sub>4</sub> is an emerging material with promising nonlinear properties in the near- and mid-infrared spectral ranges. Here, the experimental phonon spectra of AgGaGeS<sub>4</sub> single crystals synthesized by a modified Bridgman method are presented. The infrared ab...

Full description

Bibliographic Details
Main Authors: Mykhailo Valakh, Alexander P. Litvinchuk, Yevhenii Havryliuk, Volodymyr Yukhymchuk, Volodymyr Dzhagan, Dmytro Solonenko, Sergei A. Kulinich, Lyudmyla Piskach, Yuriy Kogut, Lu He, Dietrich R. T. Zahn
Format: Article
Language:English
Published: MDPI AG 2023-01-01
Series:Crystals
Subjects:
AgGaGeS<sub>4</sub>
single crystal
Raman spectra
infrared spectra
lattice dynamics
Online Access:https://www.mdpi.com/2073-4352/13/1/148

Internet

https://www.mdpi.com/2073-4352/13/1/148

Similar Items