A 6 GHz Integrated High-Efficiency Class-F<sup>−1</sup> Power Amplifier in 65 nm CMOS Achieving 47.8% Peak PAE
This paper reports a “single-transistor” Class-F<sup>−1</sup> power amplifier (PA) in 65 nm CMOS, which operates at the microwave center frequency of 6 GHz. The PA is loaded with a Class-F<sup>−1</sup> harmonic control network, employing a new “parasitic-aware” topology deduc...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-10-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/10/20/2450 |