Effective mobility enhancement of amorphous In-Ga-Zn-O thin-film transistors by holographically generated periodic conductor
In this study, we demonstrate a mobility enhancement structure for fully transparent amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs) by embedding a holographically generated periodic nano-conductor in the back-channel regions. The intrinsic field-effect mobility was enhanced...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2016-08-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4961379 |