Fabrication of Aluminum Oxide Thin-Film Devices Based on Atomic Layer Deposition and Pulsed Discrete Feed Method

Fabrication of Aluminum Oxide Thin-Film Devices Based on Atomic Layer Deposition and Pulsed Discrete Feed Method

This study demonstrates the low-temperature (<100 °C) process for growing a thin silica buffer layer and aluminum oxide by atomic layer deposition (ALD) in the same reaction chamber. Heterogeneous multilayer thin films are prepared by a dual-mode equipment based on atomic layer deposition and pla...

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Bibliographic Details
Main Authors: Shih-Chin Lin, Ching-Chiun Wang, Chuen-Lin Tien, Fu-Ching Tung, Hsuan-Fu Wang, Shih-Hsiang Lai
Format: Article
Language:English
Published: MDPI AG 2023-01-01
Series:Micromachines
Subjects:
thin film
buffer layer
aluminum oxide
atomic layer deposition
plasma-enhanced chemical vapor deposition
pulsed discrete feed method
Online Access:https://www.mdpi.com/2072-666X/14/2/279

Internet

https://www.mdpi.com/2072-666X/14/2/279

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