Fabrication of Aluminum Oxide Thin-Film Devices Based on Atomic Layer Deposition and Pulsed Discrete Feed Method
This study demonstrates the low-temperature (<100 °C) process for growing a thin silica buffer layer and aluminum oxide by atomic layer deposition (ALD) in the same reaction chamber. Heterogeneous multilayer thin films are prepared by a dual-mode equipment based on atomic layer deposition and pla...
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-01-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/14/2/279 |
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| author | Shih-Chin Lin Ching-Chiun Wang Chuen-Lin Tien Fu-Ching Tung Hsuan-Fu Wang Shih-Hsiang Lai |
| author_facet | Shih-Chin Lin Ching-Chiun Wang Chuen-Lin Tien Fu-Ching Tung Hsuan-Fu Wang Shih-Hsiang Lai |
| author_sort | Shih-Chin Lin |
| collection | DOAJ |
| description | This study demonstrates the low-temperature (<100 °C) process for growing a thin silica buffer layer and aluminum oxide by atomic layer deposition (ALD) in the same reaction chamber. Heterogeneous multilayer thin films are prepared by a dual-mode equipment based on atomic layer deposition and plasma-enhanced chemical vapor deposition (PECVD) techniques. The pulse discrete feeding method (DFM) was used to divide the precursor purging steps into smaller intervals and generate discrete feeds, which improved the saturated distribution of gas precursors, film density and deposition selectivity. The experimental results show that the process method produces a uniform microstructure and that the best film uniformity is ±2.3% and growth rate is 0.69 Å/cycle. The thickness of aluminum oxide film has a linear relationship with the cyclic growth number from 360 to 1800 cycles. Meanwhile, the structural and mechanical stress properties of aluminum oxide thin films were also verified to meet the requirements of advanced thin-film devices. |
| first_indexed | 2024-03-11T08:25:01Z |
| format | Article |
| id | doaj.art-458664185ff146a5936dd2d269bc92f3 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-11T08:25:01Z |
| publishDate | 2023-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-458664185ff146a5936dd2d269bc92f32023-11-16T22:10:00ZengMDPI AGMicromachines2072-666X2023-01-0114227910.3390/mi14020279Fabrication of Aluminum Oxide Thin-Film Devices Based on Atomic Layer Deposition and Pulsed Discrete Feed MethodShih-Chin Lin0Ching-Chiun Wang1Chuen-Lin Tien2Fu-Ching Tung3Hsuan-Fu Wang4Shih-Hsiang Lai5Mechanical and Systems Research Lab, Industrial Technology Research Institute, Hsinchu 310401, TaiwanMechanical and Systems Research Lab, Industrial Technology Research Institute, Hsinchu 310401, TaiwanDepartment of Electrical Engineering, Feng Chia University, Taichung 40724, TaiwanMechanical and Systems Research Lab, Industrial Technology Research Institute, Hsinchu 310401, TaiwanMechanical and Systems Research Lab, Industrial Technology Research Institute, Hsinchu 310401, TaiwanMechanical and Systems Research Lab, Industrial Technology Research Institute, Hsinchu 310401, TaiwanThis study demonstrates the low-temperature (<100 °C) process for growing a thin silica buffer layer and aluminum oxide by atomic layer deposition (ALD) in the same reaction chamber. Heterogeneous multilayer thin films are prepared by a dual-mode equipment based on atomic layer deposition and plasma-enhanced chemical vapor deposition (PECVD) techniques. The pulse discrete feeding method (DFM) was used to divide the precursor purging steps into smaller intervals and generate discrete feeds, which improved the saturated distribution of gas precursors, film density and deposition selectivity. The experimental results show that the process method produces a uniform microstructure and that the best film uniformity is ±2.3% and growth rate is 0.69 Å/cycle. The thickness of aluminum oxide film has a linear relationship with the cyclic growth number from 360 to 1800 cycles. Meanwhile, the structural and mechanical stress properties of aluminum oxide thin films were also verified to meet the requirements of advanced thin-film devices.https://www.mdpi.com/2072-666X/14/2/279thin filmbuffer layeraluminum oxideatomic layer depositionplasma-enhanced chemical vapor depositionpulsed discrete feed method |
| spellingShingle | Shih-Chin Lin Ching-Chiun Wang Chuen-Lin Tien Fu-Ching Tung Hsuan-Fu Wang Shih-Hsiang Lai Fabrication of Aluminum Oxide Thin-Film Devices Based on Atomic Layer Deposition and Pulsed Discrete Feed Method Micromachines thin film buffer layer aluminum oxide atomic layer deposition plasma-enhanced chemical vapor deposition pulsed discrete feed method |
| title | Fabrication of Aluminum Oxide Thin-Film Devices Based on Atomic Layer Deposition and Pulsed Discrete Feed Method |
| title_full | Fabrication of Aluminum Oxide Thin-Film Devices Based on Atomic Layer Deposition and Pulsed Discrete Feed Method |
| title_fullStr | Fabrication of Aluminum Oxide Thin-Film Devices Based on Atomic Layer Deposition and Pulsed Discrete Feed Method |
| title_full_unstemmed | Fabrication of Aluminum Oxide Thin-Film Devices Based on Atomic Layer Deposition and Pulsed Discrete Feed Method |
| title_short | Fabrication of Aluminum Oxide Thin-Film Devices Based on Atomic Layer Deposition and Pulsed Discrete Feed Method |
| title_sort | fabrication of aluminum oxide thin film devices based on atomic layer deposition and pulsed discrete feed method |
| topic | thin film buffer layer aluminum oxide atomic layer deposition plasma-enhanced chemical vapor deposition pulsed discrete feed method |
| url | https://www.mdpi.com/2072-666X/14/2/279 |
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