Remote Phonon Scattering in Two-Dimensional InSe FETs with High-<i>κ</i> Gate Stack
This work focuses on the effect of remote phonon arising from the substrate and high-<i>κ</i> gate dielectric on electron mobility in two-dimensional (2D) InSe field-effect transistors (FETs). The electrostatic characteristic under quantum confinement is derived by self-consiste...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2018-12-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/9/12/674 |