Field-free magnetization switching through modulation of zero-field spin–orbit torque efficacy
To make spin–orbit torque magnetic random access memory (SOT-MRAM) practical, current-induced magnetization switching without an external bias field is essential. Given that the CoFeB/MgO structure has already been used in typical spin-transfer torque-MRAM for its high tunneling magnetoresistance, l...
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2023-11-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0174903 |