Low-Temperature Direct Bonding of SiC to Si via Plasma Activation

Low-Temperature Direct Bonding of SiC to Si via Plasma Activation

We investigated the low-temperature direct bonding of SiC/Si via O<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math>...

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Bibliographic Details
Main Authors: Fengxuan Wang, Xiang Yang, Yongqiang Zhao, Jingmin Wu, Zhiyu Guo, Zhi He, Zhongchao Fan, Fuhua Yang
Format: Article
Language:English
Published: MDPI AG 2022-03-01
Series:Applied Sciences
Subjects:
direct bonding
plasma activation
silicon carbide
bonding interface
Online Access:https://www.mdpi.com/2076-3417/12/7/3261

Internet

https://www.mdpi.com/2076-3417/12/7/3261

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