Study on EEBS for linewidth imaging by a Monte Carlo method
A systematic analysis about the influences of electron beam focusing on scanning electron microscope (SEM) imaging for silicon (Si) trapezoidal lines was performed based on a sophisticated Monte Carlo (MC) simulation program. It was found that the focus position and the aperture angle highly affect...
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| Format: | Artikel |
| Sprache: | English |
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Elsevier
2019-12-01
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| Schriftenreihe: | Results in Physics |
| Online Zugang: | http://www.sciencedirect.com/science/article/pii/S2211379719315748 |