A V-Band Integrated Receiver Front-End Based on 0.15 <italic>&#x03BC;</italic>m GaAs pHEMT Process for Passive Millimeter-Wave Imaging

A V-Band Integrated Receiver Front-End Based on 0.15 <italic>&#x03BC;</italic>m GaAs pHEMT Process for Passive Millimeter-Wave Imaging

The design, analysis, implementation and measurement of an integrated V-band receiver front-end based on <inline-formula> <tex-math notation="LaTeX">$0.15~\mu \text{m}$ </tex-math></inline-formula> GaAs pHEMT process are presented in this paper. The front-end chip u...

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Bibliographic Details
Main Authors: Jianhao Gong, Xi Chen, Wangdong He, Amjad Altaf, Anyong Hu, Jungang Miao
Format: Article
Language:English
Published: IEEE 2022-01-01
Series:IEEE Access
Subjects:
Integrated receiver front-end
V-band
low LO power
high image rejection
015 <italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">μ</italic>m GaAs pHEMT
passive millimeter-wave imaging
Online Access:https://ieeexplore.ieee.org/document/9782146/

Internet

https://ieeexplore.ieee.org/document/9782146/

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