A V-Band Integrated Receiver Front-End Based on 0.15 <italic>μ</italic>m GaAs pHEMT Process for Passive Millimeter-Wave Imaging
The design, analysis, implementation and measurement of an integrated V-band receiver front-end based on <inline-formula> <tex-math notation="LaTeX">$0.15~\mu \text{m}$ </tex-math></inline-formula> GaAs pHEMT process are presented in this paper. The front-end chip u...
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| Format: | Article |
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IEEE
2022-01-01
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| Series: | IEEE Access |
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| Online Access: | https://ieeexplore.ieee.org/document/9782146/ |
| _version_ | 1818206941250322432 |
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| author | Jianhao Gong Xi Chen Wangdong He Amjad Altaf Anyong Hu Jungang Miao |
| author_facet | Jianhao Gong Xi Chen Wangdong He Amjad Altaf Anyong Hu Jungang Miao |
| author_sort | Jianhao Gong |
| collection | DOAJ |
| description | The design, analysis, implementation and measurement of an integrated V-band receiver front-end based on <inline-formula> <tex-math notation="LaTeX">$0.15~\mu \text{m}$ </tex-math></inline-formula> GaAs pHEMT process are presented in this paper. The front-end chip uses the super-heterodyne topology which consists of a low noise amplifier, an image reject mixer, and a multiply-by-four (<inline-formula> <tex-math notation="LaTeX">$\times 4$ </tex-math></inline-formula>) LO chain. In order to minimize the power consumed by LO chain, an active single-ended mixer is designed which requires extremely low LO power of −5 dBm. Meanwhile, the effect of signal coupling in the integrated chip is analyzed and solutions are proposed. By introducing appropriate filters into the circuit and optimizing the overall layout, the imbalance of in-phase and quadrature signals caused by unwanted coupling can be effectively mitigated, thus enhancing the image rejection of the chip. Probe and module tests are applied to the receiver front-end, and the measurement results reveal that the chip achieves −3 ± 0.7 dB conversion gain, 7 dB noise figure and more than 25 dB image rejection ratio in the RF frequency range of 52–56 GHz. Only one supply voltage of 3 V is required for the chip, and total power consumption is 312 mW. Moreover, with a continuously adjustable phase control of 360° and very broadband IF characteristics, the front-end chip is very suitable for passive millimeter-wave imaging application. |
| first_indexed | 2024-12-12T04:21:01Z |
| format | Article |
| id | doaj.art-4634f3015eb74c78b97c25465998cec4 |
| institution | Directory Open Access Journal |
| issn | 2169-3536 |
| language | English |
| last_indexed | 2024-12-12T04:21:01Z |
| publishDate | 2022-01-01 |
| publisher | IEEE |
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| series | IEEE Access |
| spelling | doaj.art-4634f3015eb74c78b97c25465998cec42022-12-22T00:38:18ZengIEEEIEEE Access2169-35362022-01-0110599335994110.1109/ACCESS.2022.31753679782146A V-Band Integrated Receiver Front-End Based on 0.15 <italic>μ</italic>m GaAs pHEMT Process for Passive Millimeter-Wave ImagingJianhao Gong0https://orcid.org/0000-0002-9567-474XXi Chen1https://orcid.org/0000-0003-0204-9185Wangdong He2https://orcid.org/0000-0002-9000-7534Amjad Altaf3Anyong Hu4https://orcid.org/0000-0003-0006-7590Jungang Miao5https://orcid.org/0000-0002-8772-7602School of Electronic and Information Engineering, Beihang University, Beijing, ChinaSchool of Electronic and Information Engineering, Beihang University, Beijing, ChinaSchool of Electronic and Information Engineering, Beihang University, Beijing, ChinaCenters of Excellence for Science and Applied Technology, Islamabad, PakistanSchool of Electronic and Information Engineering, Beihang University, Beijing, ChinaSchool of Electronic and Information Engineering, Beihang University, Beijing, ChinaThe design, analysis, implementation and measurement of an integrated V-band receiver front-end based on <inline-formula> <tex-math notation="LaTeX">$0.15~\mu \text{m}$ </tex-math></inline-formula> GaAs pHEMT process are presented in this paper. The front-end chip uses the super-heterodyne topology which consists of a low noise amplifier, an image reject mixer, and a multiply-by-four (<inline-formula> <tex-math notation="LaTeX">$\times 4$ </tex-math></inline-formula>) LO chain. In order to minimize the power consumed by LO chain, an active single-ended mixer is designed which requires extremely low LO power of −5 dBm. Meanwhile, the effect of signal coupling in the integrated chip is analyzed and solutions are proposed. By introducing appropriate filters into the circuit and optimizing the overall layout, the imbalance of in-phase and quadrature signals caused by unwanted coupling can be effectively mitigated, thus enhancing the image rejection of the chip. Probe and module tests are applied to the receiver front-end, and the measurement results reveal that the chip achieves −3 ± 0.7 dB conversion gain, 7 dB noise figure and more than 25 dB image rejection ratio in the RF frequency range of 52–56 GHz. Only one supply voltage of 3 V is required for the chip, and total power consumption is 312 mW. Moreover, with a continuously adjustable phase control of 360° and very broadband IF characteristics, the front-end chip is very suitable for passive millimeter-wave imaging application.https://ieeexplore.ieee.org/document/9782146/Integrated receiver front-endV-bandlow LO powerhigh image rejection015 <italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">μ</italic>m GaAs pHEMTpassive millimeter-wave imaging |
| spellingShingle | Jianhao Gong Xi Chen Wangdong He Amjad Altaf Anyong Hu Jungang Miao A V-Band Integrated Receiver Front-End Based on 0.15 <italic>μ</italic>m GaAs pHEMT Process for Passive Millimeter-Wave Imaging IEEE Access Integrated receiver front-end V-band low LO power high image rejection 015 <italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">μ</italic>m GaAs pHEMT passive millimeter-wave imaging |
| title | A V-Band Integrated Receiver Front-End Based on 0.15 <italic>μ</italic>m GaAs pHEMT Process for Passive Millimeter-Wave Imaging |
| title_full | A V-Band Integrated Receiver Front-End Based on 0.15 <italic>μ</italic>m GaAs pHEMT Process for Passive Millimeter-Wave Imaging |
| title_fullStr | A V-Band Integrated Receiver Front-End Based on 0.15 <italic>μ</italic>m GaAs pHEMT Process for Passive Millimeter-Wave Imaging |
| title_full_unstemmed | A V-Band Integrated Receiver Front-End Based on 0.15 <italic>μ</italic>m GaAs pHEMT Process for Passive Millimeter-Wave Imaging |
| title_short | A V-Band Integrated Receiver Front-End Based on 0.15 <italic>μ</italic>m GaAs pHEMT Process for Passive Millimeter-Wave Imaging |
| title_sort | v band integrated receiver front end based on 0 15 italic x03bc italic m gaas phemt process for passive millimeter wave imaging |
| topic | Integrated receiver front-end V-band low LO power high image rejection 015 <italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">μ</italic>m GaAs pHEMT passive millimeter-wave imaging |
| url | https://ieeexplore.ieee.org/document/9782146/ |
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