Geometric and electronic structures of monolayer hexagonal boron nitride with multi-vacancy

Geometric and electronic structures of monolayer hexagonal boron nitride with multi-vacancy

Abstract Hexagonal boron nitride (h-BN) is an electrical insulator with a large band gap of 5 eV and a good thermal conductor of which melting point reaches about 3000 °C. Due to these properties, much attention was given to the thermal stability rather than the electrical properties of h-BN experim...

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Bibliographic Details
Main Authors: Do-Hyun Kim, Hag-Soo Kim, Min Woo Song, Seunghyun Lee, Sang Yun Lee
Format: Article
Language:English
Published: SpringerOpen 2017-05-01
Series:Nano Convergence
Subjects:
Boron nitride
Vacancy
Defect
Deformation
Band structure
Online Access:http://link.springer.com/article/10.1186/s40580-017-0107-0

Internet

http://link.springer.com/article/10.1186/s40580-017-0107-0

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