Mathematical Modeling of Drain Current Estimation in a CSDG MOSFET, Based on La<sub>2</sub>O<sub>3</sub> Oxide Layer with Fabrication—A Nanomaterial Approach

Mathematical Modeling of Drain Current Estimation in a CSDG MOSFET, Based on La<sub>2</sub>O<sub>3</sub> Oxide Layer with Fabrication—A Nanomaterial Approach

In this work, three-dimensional modeling of the surface potential along the cylindrical surrounding double-gate (CSDG) MOSFET is proposed. The derived surface potential is used to predict the values of electron mobility along the length of the device, thereby deriving the drain current equation at t...

Full description

Bibliographic Details
Main Authors: Naveenbalaji Gowthaman, Viranjay M. Srivastava
Format: Article
Language:English
Published: MDPI AG 2022-09-01
Series:Nanomaterials
Subjects:
cylindrical structure
double-gate MOSFET
drain current
nanotechnology
material properties
microelectronics
Online Access:https://www.mdpi.com/2079-4991/12/19/3374

Internet

https://www.mdpi.com/2079-4991/12/19/3374

Similar Items