Mechanism of defects and electrode structure on the performance of AlN-based metal semiconductor metal detectors

Mechanism of defects and electrode structure on the performance of AlN-based metal semiconductor metal detectors

We used the metal-organic chemical vapor deposition(MOCVD) method to grow AlN material on a c-plane sapphire substrate and fabricate an AlN-based metal-semiconductor-metal (MSM) detector. Analyzing the influence mechanism of different dislocation densities in AlN materials and detector electrode str...

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Bibliographic Details
Main Authors: Guanghui Li, Pengbo Wang, Xinran He, Yulong Meng, Feng Liang, Mei Zhou, Degang Zhao
Format: Article
Language:English
Published: IOP Publishing 2021-01-01
Series:Materials Research Express
Subjects:
AlN
metal-semiconductor-metal
MOCVD
electrode structure
UV detector
Online Access:https://doi.org/10.1088/2053-1591/ac3dad

Internet

https://doi.org/10.1088/2053-1591/ac3dad

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