Mechanism of defects and electrode structure on the performance of AlN-based metal semiconductor metal detectors
We used the metal-organic chemical vapor deposition(MOCVD) method to grow AlN material on a c-plane sapphire substrate and fabricate an AlN-based metal-semiconductor-metal (MSM) detector. Analyzing the influence mechanism of different dislocation densities in AlN materials and detector electrode str...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2021-01-01
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| Series: | Materials Research Express |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2053-1591/ac3dad |
| _version_ | 1797746662885556224 |
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| author | Guanghui Li Pengbo Wang Xinran He Yulong Meng Feng Liang Mei Zhou Degang Zhao |
| author_facet | Guanghui Li Pengbo Wang Xinran He Yulong Meng Feng Liang Mei Zhou Degang Zhao |
| author_sort | Guanghui Li |
| collection | DOAJ |
| description | We used the metal-organic chemical vapor deposition(MOCVD) method to grow AlN material on a c-plane sapphire substrate and fabricate an AlN-based metal-semiconductor-metal (MSM) detector. Analyzing the influence mechanism of different dislocation densities in AlN materials and detector electrode structure on the detector performance, it was found that the lower the dislocations can effectively reduce the dark current of the detector under zero bias voltage, and help improve the performance of the detector. The study also found that when the finger spacing of the detector remained the same and the finger width increased, the efficiency of the detector decreased, while the response time of the detector increased, when the finger width of the detector electrodes remained unchanged and the finger spacing increased, the response time of the detector increased. Therefore, the electrode finger width and finger spacing must be compromised in the design of the electrode structure to improve the performance of the AlN-based MSM detector. |
| first_indexed | 2024-03-12T15:41:03Z |
| format | Article |
| id | doaj.art-46a428271b5146388f81343123c124b6 |
| institution | Directory Open Access Journal |
| issn | 2053-1591 |
| language | English |
| last_indexed | 2024-03-12T15:41:03Z |
| publishDate | 2021-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Materials Research Express |
| spelling | doaj.art-46a428271b5146388f81343123c124b62023-08-09T15:59:35ZengIOP PublishingMaterials Research Express2053-15912021-01-0181212590210.1088/2053-1591/ac3dadMechanism of defects and electrode structure on the performance of AlN-based metal semiconductor metal detectorsGuanghui Li0https://orcid.org/0000-0003-3457-3686Pengbo Wang1Xinran He2Yulong Meng3Feng Liang4https://orcid.org/0000-0002-2064-8918Mei Zhou5Degang Zhao6Department of Applied Physics, China Agricultural University , Beijing 100083, People’s Republic of ChinaCollege of Science, China Agricultural University , Beijing 100083, People’s Republic of ChinaCollege of Science, China Agricultural University , Beijing 100083, People’s Republic of ChinaCollege of Science, China Agricultural University , Beijing 100083, People’s Republic of ChinaState Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People’s Republic of ChinaDepartment of Applied Physics, China Agricultural University , Beijing 100083, People’s Republic of ChinaState Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People’s Republic of ChinaWe used the metal-organic chemical vapor deposition(MOCVD) method to grow AlN material on a c-plane sapphire substrate and fabricate an AlN-based metal-semiconductor-metal (MSM) detector. Analyzing the influence mechanism of different dislocation densities in AlN materials and detector electrode structure on the detector performance, it was found that the lower the dislocations can effectively reduce the dark current of the detector under zero bias voltage, and help improve the performance of the detector. The study also found that when the finger spacing of the detector remained the same and the finger width increased, the efficiency of the detector decreased, while the response time of the detector increased, when the finger width of the detector electrodes remained unchanged and the finger spacing increased, the response time of the detector increased. Therefore, the electrode finger width and finger spacing must be compromised in the design of the electrode structure to improve the performance of the AlN-based MSM detector.https://doi.org/10.1088/2053-1591/ac3dadAlNmetal-semiconductor-metalMOCVDelectrode structureUV detector |
| spellingShingle | Guanghui Li Pengbo Wang Xinran He Yulong Meng Feng Liang Mei Zhou Degang Zhao Mechanism of defects and electrode structure on the performance of AlN-based metal semiconductor metal detectors Materials Research Express AlN metal-semiconductor-metal MOCVD electrode structure UV detector |
| title | Mechanism of defects and electrode structure on the performance of AlN-based metal semiconductor metal detectors |
| title_full | Mechanism of defects and electrode structure on the performance of AlN-based metal semiconductor metal detectors |
| title_fullStr | Mechanism of defects and electrode structure on the performance of AlN-based metal semiconductor metal detectors |
| title_full_unstemmed | Mechanism of defects and electrode structure on the performance of AlN-based metal semiconductor metal detectors |
| title_short | Mechanism of defects and electrode structure on the performance of AlN-based metal semiconductor metal detectors |
| title_sort | mechanism of defects and electrode structure on the performance of aln based metal semiconductor metal detectors |
| topic | AlN metal-semiconductor-metal MOCVD electrode structure UV detector |
| url | https://doi.org/10.1088/2053-1591/ac3dad |
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