Efficiency Optimization for All-Silicon Carbide (SiC) PWM Rectifier Considering the Impact of Gate-Source Voltage Interference

Efficiency Optimization for All-Silicon Carbide (SiC) PWM Rectifier Considering the Impact of Gate-Source Voltage Interference

Compared with conventional silicon (Si)-based Pulse Width Modulation (PWM) rectifiers, PWM rectifiers based on silicon carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) have significant technical advantages and broad application prospects in terms of efficiency and power den...

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Bibliographic Details
Main Authors: Zhijun Li, Zuoxing Wang, Trillion Zheng, Hong Li, Bo Huang, Tiancong Shao
Format: Article
Language:English
Published: MDPI AG 2020-03-01
Series:Energies
Subjects:
silicon carbide semiconductors
loss distribution
kelvin package
converter efficiency
Online Access:https://www.mdpi.com/1996-1073/13/6/1421

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https://www.mdpi.com/1996-1073/13/6/1421

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