Efficiency Optimization for All-Silicon Carbide (SiC) PWM Rectifier Considering the Impact of Gate-Source Voltage Interference
Compared with conventional silicon (Si)-based Pulse Width Modulation (PWM) rectifiers, PWM rectifiers based on silicon carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) have significant technical advantages and broad application prospects in terms of efficiency and power den...
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| Format: | Article |
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MDPI AG
2020-03-01
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| Series: | Energies |
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| Online Access: | https://www.mdpi.com/1996-1073/13/6/1421 |
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| author | Zhijun Li Zuoxing Wang Trillion Zheng Hong Li Bo Huang Tiancong Shao |
| author_facet | Zhijun Li Zuoxing Wang Trillion Zheng Hong Li Bo Huang Tiancong Shao |
| author_sort | Zhijun Li |
| collection | DOAJ |
| description | Compared with conventional silicon (Si)-based Pulse Width Modulation (PWM) rectifiers, PWM rectifiers based on silicon carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) have significant technical advantages and broad application prospects in terms of efficiency and power density, inherited from the high-speed switching feature. However, high-speed switching also induces gate-source voltage interference, which impacts the overall character of the conversion system. This paper considered the impact of gate-source voltage interference on loss, revealing an efficiency optimization for all-SiC PWM rectifiers. Firstly, this paper theoretically investigated the mechanism of improving the conversion system efficiency by using the 4-pin Kelvin packaged SiC MOSFETs. Then, based on the industrial product case study, loss distribution, using different package styles, was quantitatively analyzed. Finally, experiment test results verified the efficiency improvement of the PWM rectifier with the 4-pin Kelvin package SiC MOSFETs. |
| first_indexed | 2024-04-11T14:10:07Z |
| format | Article |
| id | doaj.art-46f9cf63a29b4d1797b090651c5ee4c5 |
| institution | Directory Open Access Journal |
| issn | 1996-1073 |
| language | English |
| last_indexed | 2024-04-11T14:10:07Z |
| publishDate | 2020-03-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Energies |
| spelling | doaj.art-46f9cf63a29b4d1797b090651c5ee4c52022-12-22T04:19:44ZengMDPI AGEnergies1996-10732020-03-01136142110.3390/en13061421en13061421Efficiency Optimization for All-Silicon Carbide (SiC) PWM Rectifier Considering the Impact of Gate-Source Voltage InterferenceZhijun Li0Zuoxing Wang1Trillion Zheng2Hong Li3Bo Huang4Tiancong Shao5School of Electrical Engineering, Institute of Power Electronics and Electric Traction, Beijing Jiaotong University, Beijing 100044, ChinaSchool of Electrical Engineering, Institute of Power Electronics and Electric Traction, Beijing Jiaotong University, Beijing 100044, ChinaSchool of Electrical Engineering, Institute of Power Electronics and Electric Traction, Beijing Jiaotong University, Beijing 100044, ChinaSchool of Electrical Engineering, Institute of Power Electronics and Electric Traction, Beijing Jiaotong University, Beijing 100044, ChinaPower Supply Business Unit, Global Power Technology Co., Ltd., Beijing 100192, ChinaSchool of Electrical Engineering, Institute of Power Electronics and Electric Traction, Beijing Jiaotong University, Beijing 100044, ChinaCompared with conventional silicon (Si)-based Pulse Width Modulation (PWM) rectifiers, PWM rectifiers based on silicon carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) have significant technical advantages and broad application prospects in terms of efficiency and power density, inherited from the high-speed switching feature. However, high-speed switching also induces gate-source voltage interference, which impacts the overall character of the conversion system. This paper considered the impact of gate-source voltage interference on loss, revealing an efficiency optimization for all-SiC PWM rectifiers. Firstly, this paper theoretically investigated the mechanism of improving the conversion system efficiency by using the 4-pin Kelvin packaged SiC MOSFETs. Then, based on the industrial product case study, loss distribution, using different package styles, was quantitatively analyzed. Finally, experiment test results verified the efficiency improvement of the PWM rectifier with the 4-pin Kelvin package SiC MOSFETs.https://www.mdpi.com/1996-1073/13/6/1421silicon carbide semiconductorsloss distributionkelvin packageconverter efficiency |
| spellingShingle | Zhijun Li Zuoxing Wang Trillion Zheng Hong Li Bo Huang Tiancong Shao Efficiency Optimization for All-Silicon Carbide (SiC) PWM Rectifier Considering the Impact of Gate-Source Voltage Interference Energies silicon carbide semiconductors loss distribution kelvin package converter efficiency |
| title | Efficiency Optimization for All-Silicon Carbide (SiC) PWM Rectifier Considering the Impact of Gate-Source Voltage Interference |
| title_full | Efficiency Optimization for All-Silicon Carbide (SiC) PWM Rectifier Considering the Impact of Gate-Source Voltage Interference |
| title_fullStr | Efficiency Optimization for All-Silicon Carbide (SiC) PWM Rectifier Considering the Impact of Gate-Source Voltage Interference |
| title_full_unstemmed | Efficiency Optimization for All-Silicon Carbide (SiC) PWM Rectifier Considering the Impact of Gate-Source Voltage Interference |
| title_short | Efficiency Optimization for All-Silicon Carbide (SiC) PWM Rectifier Considering the Impact of Gate-Source Voltage Interference |
| title_sort | efficiency optimization for all silicon carbide sic pwm rectifier considering the impact of gate source voltage interference |
| topic | silicon carbide semiconductors loss distribution kelvin package converter efficiency |
| url | https://www.mdpi.com/1996-1073/13/6/1421 |
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