High breakdown voltage of 1.3 kV and low turn-on voltage of 0.48 V β-Ga2O3 heterojunction barrier Schottky diode with tungsten Schottky contact

High breakdown voltage of 1.3 kV and low turn-on voltage of 0.48 V β-Ga2O3 heterojunction barrier Schottky diode with tungsten Schottky contact

β-Ga _2 O _3 power diodes were expected to possess low turn-on voltage ( V _on ), low reverse leakage ( J _R ), and high blocking capability for low power losses. In this work, a low V _on (0.48 V) β-Ga _2 O _3 heterojunction barrier Schottky diode (HJBS) with tungsten Schottky contact was achieved....

Full description

Bibliographic Details
Main Authors: Qiuyan Li, Weibing Hao, Jinyang Liu, Zhao Han, Song He, Xuanze Zhou, Guangwei Xu, Shibing Long
Format: Article
Language:English
Published: IOP Publishing 2024-01-01
Series:Applied Physics Express
Subjects:
β-Ga2O3
low turn-on voltage
heterojunction barrier schottky diode
P-NiO
tungsten
power device
Online Access:https://doi.org/10.35848/1882-0786/ad4b93

Internet

https://doi.org/10.35848/1882-0786/ad4b93

Similar Items