Characterization of the Ge/Bi2O3 Interfaces

Characterization of the Ge/Bi2O3 Interfaces

In this article, the properties of the Ge/Bi2O3 interfaces as microwave cavities are reported and discussed. The interface is composed of monoclinic Bi2O3 films grown onto polycrystalline cubic Ge substrate. It is observed that consistent with the theoretical design of the energy band diagram, the e...

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Bibliographic Details
Main Authors: Seham Reef Alharbi, Atef Fayez Qasrawi
Format: Article
Language:English
Published: Associação Brasileira de Metalurgia e Materiais (ABM); Associação Brasileira de Cerâmica (ABC); Associação Brasileira de Polímeros (ABPol)
Series:Materials Research
Subjects:
Ge/Bi2O3
heterojunction
X-ray
electronic switch
microwave cavity
Online Access:http://www.scielo.br/pdf/mr/v22n3/1516-1439-mr-22-03-e20180722.pdf

Internet

http://www.scielo.br/pdf/mr/v22n3/1516-1439-mr-22-03-e20180722.pdf

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