On the Properties of the Si-SiO2 Transition Layer in Multilayer Silicon Structures
Capacitance spectroscopy was used to study the capacitive-voltage characteristics of multilayer structures with a Si-SiO2 transition layer in Al-SiO2-n-Si type samples fabricated by the thermal oxidation of a semiconductor. It is shown that the inhomogeneous distribution of the density of surface s...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
V.N. Karazin Kharkiv National University Publishing
2023-12-01
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| Series: | East European Journal of Physics |
| Subjects: | |
| Online Access: | https://periodicals.karazin.ua/eejp/article/view/22077 |