On the Properties of the Si-SiO2 Transition Layer in Multilayer Silicon Structures
Capacitance spectroscopy was used to study the capacitive-voltage characteristics of multilayer structures with a Si-SiO2 transition layer in Al-SiO2-n-Si type samples fabricated by the thermal oxidation of a semiconductor. It is shown that the inhomogeneous distribution of the density of surface s...
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| Format: | Article |
| Language: | English |
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V.N. Karazin Kharkiv National University Publishing
2023-12-01
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| Series: | East European Journal of Physics |
| Subjects: | |
| Online Access: | https://periodicals.karazin.ua/eejp/article/view/22077 |
| _version_ | 1827614303512952832 |
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| author | Shakhrukh Kh. Daliev Fayzulla A. Saparov |
| author_facet | Shakhrukh Kh. Daliev Fayzulla A. Saparov |
| author_sort | Shakhrukh Kh. Daliev |
| collection | DOAJ |
| description |
Capacitance spectroscopy was used to study the capacitive-voltage characteristics of multilayer structures with a Si-SiO2 transition layer in Al-SiO2-n-Si type samples fabricated by the thermal oxidation of a semiconductor. It is shown that the inhomogeneous distribution of the density of surface states is a localized electroactive center at the very semiconductor-dielectric interface, due to over-barrier charge emission or thermal ionization of impurity centers.
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| first_indexed | 2024-03-09T08:52:58Z |
| format | Article |
| id | doaj.art-4728e76379fd446d9603a82d65bbdf9a |
| institution | Directory Open Access Journal |
| issn | 2312-4334 2312-4539 |
| language | English |
| last_indexed | 2024-03-09T08:52:58Z |
| publishDate | 2023-12-01 |
| publisher | V.N. Karazin Kharkiv National University Publishing |
| record_format | Article |
| series | East European Journal of Physics |
| spelling | doaj.art-4728e76379fd446d9603a82d65bbdf9a2023-12-02T13:52:25ZengV.N. Karazin Kharkiv National University PublishingEast European Journal of Physics2312-43342312-45392023-12-01410.26565/2312-4334-2023-4-25On the Properties of the Si-SiO2 Transition Layer in Multilayer Silicon StructuresShakhrukh Kh. Daliev0Fayzulla A. Saparov1Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, UzbekistanInstitute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan Capacitance spectroscopy was used to study the capacitive-voltage characteristics of multilayer structures with a Si-SiO2 transition layer in Al-SiO2-n-Si type samples fabricated by the thermal oxidation of a semiconductor. It is shown that the inhomogeneous distribution of the density of surface states is a localized electroactive center at the very semiconductor-dielectric interface, due to over-barrier charge emission or thermal ionization of impurity centers. https://periodicals.karazin.ua/eejp/article/view/22077MDS structuresilicontransition layerinterface, temperaturedielectric layer |
| spellingShingle | Shakhrukh Kh. Daliev Fayzulla A. Saparov On the Properties of the Si-SiO2 Transition Layer in Multilayer Silicon Structures East European Journal of Physics MDS structure silicon transition layer interface , temperature dielectric layer |
| title | On the Properties of the Si-SiO2 Transition Layer in Multilayer Silicon Structures |
| title_full | On the Properties of the Si-SiO2 Transition Layer in Multilayer Silicon Structures |
| title_fullStr | On the Properties of the Si-SiO2 Transition Layer in Multilayer Silicon Structures |
| title_full_unstemmed | On the Properties of the Si-SiO2 Transition Layer in Multilayer Silicon Structures |
| title_short | On the Properties of the Si-SiO2 Transition Layer in Multilayer Silicon Structures |
| title_sort | on the properties of the si sio2 transition layer in multilayer silicon structures |
| topic | MDS structure silicon transition layer interface , temperature dielectric layer |
| url | https://periodicals.karazin.ua/eejp/article/view/22077 |
| work_keys_str_mv | AT shakhrukhkhdaliev onthepropertiesofthesisio2transitionlayerinmultilayersiliconstructures AT fayzullaasaparov onthepropertiesofthesisio2transitionlayerinmultilayersiliconstructures |