On the Properties of the Si-SiO2 Transition Layer in Multilayer Silicon Structures

On the Properties of the Si-SiO2 Transition Layer in Multilayer Silicon Structures

Capacitance spectroscopy was used to study the capacitive-voltage characteristics of multilayer structures with a Si-SiO2 transition layer in Al-SiO2-n-Si type samples fabricated by the thermal oxidation of a semiconductor. It is shown that the inhomogeneous distribution of the density of surface s...

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Bibliographic Details
Main Authors: Shakhrukh Kh. Daliev, Fayzulla A. Saparov
Format: Article
Language:English
Published: V.N. Karazin Kharkiv National University Publishing 2023-12-01
Series:East European Journal of Physics
Subjects:
MDS structure
silicon
transition layer
interface
, temperature
dielectric layer
Online Access:https://periodicals.karazin.ua/eejp/article/view/22077

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