Contamination reduction for 150 mm SiC substrates by integrating CMP and Post-CMP cleaning
The quality of silicon carbide (SiC) substrates has great influence on the quality of the epitaxial layers atop. During the epitaxial growth, crystallographic defects and substrate contaminations may transform to various surface defects, such as carrots, polytype inclusions and scratches, which are...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2023-01-01
|
| Series: | Materials Research Express |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2053-1591/ad0094 |