CMOS X‐band pole‐converging triple‐cascode LNA with low‐noise and wideband performance

CMOS X‐band pole‐converging triple‐cascode LNA with low‐noise and wideband performance

Abstract A pole‐converging X‐band low‐noise amplifier (LNA) using 130 nm CMOS technology is proposed. An on‐chip pole‐converging capacitor CPC is added between the gate and drain node of the common‐gate (CG) stage. The capacitor CPC combines with a noise‐reducing inductor L1 to converge poles into t...

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Hlavní autoři: Cheng Cao, Yubing Li, Zhe Wang, Zemeng Huang, Tao Tan, Deyang Chen, Xiuping Li
Médium: Článek
Jazyk:English
Vydáno: Hindawi-IET 2022-01-01
Edice:IET Circuits, Devices and Systems
Témata:
capacitors
CMOS integrated circuits
field effect MIMIC
inductors
low noise amplifiers
millimetre wave amplifiers
On-line přístup:https://doi.org/10.1049/cds2.12081

Internet

https://doi.org/10.1049/cds2.12081

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