CMOS X‐band pole‐converging triple‐cascode LNA with low‐noise and wideband performance
Abstract A pole‐converging X‐band low‐noise amplifier (LNA) using 130 nm CMOS technology is proposed. An on‐chip pole‐converging capacitor CPC is added between the gate and drain node of the common‐gate (CG) stage. The capacitor CPC combines with a noise‐reducing inductor L1 to converge poles into t...
| Үндсэн зохиолчид: | , , , , , , |
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| Формат: | Өгүүллэг |
| Хэл сонгох: | English |
| Хэвлэсэн: |
Hindawi-IET
2022-01-01
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| Цуврал: | IET Circuits, Devices and Systems |
| Нөхцлүүд: | |
| Онлайн хандалт: | https://doi.org/10.1049/cds2.12081 |