CMOS X‐band pole‐converging triple‐cascode LNA with low‐noise and wideband performance
Abstract A pole‐converging X‐band low‐noise amplifier (LNA) using 130 nm CMOS technology is proposed. An on‐chip pole‐converging capacitor CPC is added between the gate and drain node of the common‐gate (CG) stage. The capacitor CPC combines with a noise‐reducing inductor L1 to converge poles into t...
| Main Authors: | , , , , , , |
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| פורמט: | Article |
| שפה: | English |
| יצא לאור: |
Hindawi-IET
2022-01-01
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| סדרה: | IET Circuits, Devices and Systems |
| נושאים: | |
| גישה מקוונת: | https://doi.org/10.1049/cds2.12081 |