Observations of very fast electron traps at SiC/high-κ dielectric interfaces
Very fast interface traps have recently been suggested to be the main cause behind poor channel-carrier mobility in SiC metal–oxide–semiconductor field effect transistors. It has been hypothesized that the NI traps are defects located inside the SiO2 dielectric with energy levels close to the SiC co...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2023-11-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0160287 |