Progress in Near-Equilibrium Ammonothermal (NEAT) Growth of GaN Substrates for GaN-on-GaN Semiconductor Devices

Progress in Near-Equilibrium Ammonothermal (NEAT) Growth of GaN Substrates for GaN-on-GaN Semiconductor Devices

This paper reviews the near-equilibrium ammonothermal (NEAT) growth of bulk gallium nitride (GaN) crystals and reports the evaluation of 2″ GaN substrates and 100 mmbulk GaN crystal grown in our pilot production reactor. Recent progress in oxygen reduction enabled growing NEAT GaN substrates with lo...

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Bibliographic Details
Main Authors: Tadao Hashimoto, Edward R. Letts, Daryl Key
Format: Article
Language:English
Published: MDPI AG 2022-08-01
Series:Crystals
Subjects:
bulk GaN
ammonothermal growth
GaN substrate
NEAT method
Online Access:https://www.mdpi.com/2073-4352/12/8/1085

Internet

https://www.mdpi.com/2073-4352/12/8/1085

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