Progress in Near-Equilibrium Ammonothermal (NEAT) Growth of GaN Substrates for GaN-on-GaN Semiconductor Devices

Progress in Near-Equilibrium Ammonothermal (NEAT) Growth of GaN Substrates for GaN-on-GaN Semiconductor Devices

This paper reviews the near-equilibrium ammonothermal (NEAT) growth of bulk gallium nitride (GaN) crystals and reports the evaluation of 2″ GaN substrates and 100 mmbulk GaN crystal grown in our pilot production reactor. Recent progress in oxygen reduction enabled growing NEAT GaN substrates with lo...

Full description

Bibliographic Details
Main Authors:	Tadao Hashimoto, Edward R. Letts, Daryl Key
Format:	Article
Language:	English
Published:	MDPI AG 2022-08-01
Series:	Crystals
Subjects:	bulk GaN ammonothermal growth GaN substrate NEAT method
Online Access:	https://www.mdpi.com/2073-4352/12/8/1085

Similar Items

Characterization of Defects in GaN: Optical and Magnetic Resonance Techniques
by: Jaime A. Freitas, et al.
Published: (2022-09-01)

On Stress-Induced Polarization Effect in Ammonothermally Grown GaN Crystals
by: Karolina Grabianska, et al.
Published: (2022-04-01)

AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts
by: Wojciech Wojtasiak, et al.
Published: (2018-10-01)

Physics-Based TCAD Simulation and Calibration of 600 V GaN/AlGaN/GaN Device Characteristics and Analysis of Interface Traps
by: Yu-Lin Song, et al.
Published: (2021-06-01)

GaN Monolithic PWM Generator With Dynamic Offset Compensation
by: Katia Samperi, et al.
Published: (2023-01-01)

Vertical GaN-on-GaN Schottky diodes as α-particle radiation sensors
by: Sandupatla, Abhinay, et al.
Published: (2020)

Reverse Leakage Analysis for As-Grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes
by: Kai Fu, et al.
Published: (2020-01-01)

MOCVD Growth and Investigation of InGaN/GaN Heterostructure Grown on AlGaN/GaN-on-Si Template
by: Haruka Matsuura, et al.
Published: (2019-04-01)

Unidirectional Operation of p-GaN Gate AlGaN/GaN Heterojunction FET Using Rectifying Drain Electrode
by: Tae-Hyeon Kim, et al.
Published: (2021-03-01)

Novel Bidirectional ESD Circuit for GaN HEMT
by: Pengfei Zhang, et al.
Published: (2025-01-01)

Analysis of electrical properties in lateral Schottky barrier diode based on n-GaN and AlGaN/GaN heterostructure
by: Honghui Liu, et al.
Published: (2022-11-01)

Normally-off p-GaN Gated AlGaN/GaN HEMTs Using Plasma Oxidation Technique in Access Region
by: Xinke Liu, et al.
Published: (2020-01-01)

Effect of X-ray irradiation on threshold voltage of AlGaN/GaN HEMTs with p-GaN and MIS Gates
by: Yongle Qi, et al.
Published: (2020-12-01)

Research Progress and Development Prospects of Enhanced GaN HEMTs
by: Lili Han, et al.
Published: (2023-06-01)

Simulation Study on the Structure Design of p-GaN/AlGaN/GaN HEMT-Based Ultraviolet Phototransistors
by: Haiping Wang, et al.
Published: (2022-12-01)

Highly Reliable Temperature Sensor Based on p-GaN/AlGaN/GaN Hybrid Anode Diode with Wide Operation Temperature from 73 K to 573 K
by: An Yang, et al.
Published: (2023-04-01)

First demonstration of high-frequency InAlN/GaN high-electron-mobility transistor using GaN-on-insulator technology via 200 mm wafer bonding
by: Li, Hanchao, et al.
Published: (2024)

Optical Properties of GaN Thin Flim
by: Salma M. Shaban
Published: (2009-12-01)

Unintentional Fe incorporation in the homo-epitaxy of GaN on Fe-doped freestanding GaN substrate
by: Songyuan Xia, et al.
Published: (2025-01-01)

Investigation of Forward Tunneling Characteristics of InGaN/GaN Blue Light-Emitting Diodes on Freestanding GaN Detached from a Si Substrate
by: Moonsang Lee, et al.
Published: (2018-07-01)

On the Conduction Properties of Vertical GaN n-Channel Trench MISFETs
by: Eldad Bahat Treidel, et al.
Published: (2021-01-01)

TCAD analysis of the high-temperature reverse-bias stress on AlGaN/GaN HEMTs
by: Franco Ercolano, et al.
Published: (2025-03-01)

High Sensitivity Piezogenerator Based on GaN Nanowires
by: L. Lu, et al.
Published: (2017-08-01)

Passivation of Surface States in GaN by NiO Particles
by: Martin Velazquez-Rizo, et al.
Published: (2022-01-01)

Two-Step GaN Layer Growth for High-Voltage Lateral AlGaN/GaN HEMT
by: Yusnizam Yusuf, et al.
Published: (2023-01-01)

Advances in GaN Crystals and Their Applications
by: Ikai Lo
Published: (2018-03-01)

Effects of GaN Buffer Resistance on the Device Performances of AlGaN/GaN HEMTs
by: Ki-Sik Im, et al.
Published: (2020-09-01)

Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer
by: Ju, Zhen Gang, et al.
Published: (2016)

High Power Normally-OFF GaN/AlGaN HEMT with Regrown p Type GaN
by: Gwen Rolland, et al.
Published: (2021-09-01)

Vertical GaN-on-GaN Schottky Diodes as α-Particle Radiation Sensors
by: Abhinay Sandupatla, et al.
Published: (2020-05-01)

Multi-channel AlN/GaN Schottky barrier diodes
by: Hanchao Li, et al.
Published: (2025-01-01)

Multicolor Emission from Ultraviolet GaN-Based Photonic Quasicrystal Nanopyramid Structure with Semipolar In x Ga1−x N/GaN Multiple Quantum Wells
by: Cheng-Chang Chen, et al.
Published: (2021-09-01)

1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer
by: Wei He, et al.
Published: (2022-01-01)

Optical Properties of GaN-Based Green Light-Emitting Diodes Influenced by Low-Temperature p-GaN Layer
by: Jianfei Li, et al.
Published: (2021-11-01)

E/D-Mode GaN Inverter on a 150-mm Si Wafer Based on p-GaN Gate E-Mode HEMT Technology
by: Li-Fang Jia, et al.
Published: (2021-05-01)

Fully Relaxed, Crack-Free AlGaN with upto 50% Al Composition Grown on Porous GaN Pseudo-Substrate
by: Nirupam Hatui, et al.
Published: (2022-07-01)

Demonstration of Acceptor-Like Traps at Positive Polarization Interfaces in Ga-Polar P-type (AlGaN/AlN)/GaN Superlattices
by: Athith Krishna, et al.
Published: (2022-05-01)

Optimization of Non-Alloyed Backside Ohmic Contacts to N-Face GaN for Fully Vertical GaN-on-Silicon-Based Power Devices
by: Youssef Hamdaoui, et al.
Published: (2024-09-01)

The Modeling of GaN-FET Power Devices in SPICE
by: Janusz Zarębski, et al.
Published: (2023-11-01)

Surface Morphology Evolution Mechanisms of InGaN/GaN Multiple Quantum Wells with Mixture N2/H2-Grown GaN Barrier
by: Xiaorun Zhou, et al.
Published: (2017-05-01)