Tuning the Electrical Parameters of p-NiO<sub>x</sub>-Based Thin Film Transistors (TFTs) by Pulsed Laser Irradiation

Tuning the Electrical Parameters of p-NiO<sub>x</sub>-Based Thin Film Transistors (TFTs) by Pulsed Laser Irradiation

We utilized laser irradiation as a potential technique in tuning the electrical performance of NiO<sub>x</sub>/SiO<sub>2</sub> thin film transistors (TFTs). By optimizing the laser fluence and the number of laser pulses, the TFT performance was evaluated in terms of mobility,...

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Bibliographic Details
Main Authors: Poreddy Manojreddy, Srikanth Itapu, Jammalamadaka Krishna Ravali, Selvendran Sakkarai
Format: Article
Language:English
Published: MDPI AG 2021-06-01
Series:Condensed Matter
Subjects:
laser irradiation
p-type NiO
SiO<sub>2</sub> layer
thin film transistor
Online Access:https://www.mdpi.com/2410-3896/6/2/21

Internet

https://www.mdpi.com/2410-3896/6/2/21

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