STEM nanoanalysis of Au/Pt/Ti-Si<sub>3</sub>N<sub>4 </sub>interfacial defects and reactions during local stress of SiGe HBTs

STEM nanoanalysis of Au/Pt/Ti-Si<sub>3</sub>N<sub>4 </sub>interfacial defects and reactions during local stress of SiGe HBTs

<p>Abstract</p> <p>A new insight on the behavior of metal contact-insulating interfaces in SiGe heterojunction bipolar transistor is given by high-performance aberration-corrected scanning transmission electron microscopy (STEM) analysis tools equipped with sub-nanometric probe siz...

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Bibliographic Details
Main Authors: Alaeddine Ali, Genevois C&#233;cile, Chevalier Laurence, Daoud Kaouther
Format: Article
Language:English
Published: SpringerOpen 2011-01-01
Series:Nanoscale Research Letters
Subjects:
HBT
STEM-HAADF
EDS
EFTEM
failure
reliability
Online Access:http://www.nanoscalereslett.com/content/6/1/574

Internet

http://www.nanoscalereslett.com/content/6/1/574

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